isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 3/3/03 1 2 3 7 8 16 15 10 9 0.26 20.32 19.32 4.0 3.0 0.5 7.62 13 max 7.0 6.0 6 11 2.54 1.2 0.5 3.0 1.2 3.0 4.0 3.0 3.35 7.0 6.0 0.5 0.5 7.62 1 2 4 3 0.26 13 max 2.54 10.16 0.26 7.62 isp817x3,2,1 isp817-3,2,1 isp827x3,2,1 isp827-3,2,1 3.0 10.16 9.16 4.0 3.0 3.35 0.5 7.0 6.0 7.62 2 3 4 7 6 5 1.2 13 max 0.5 0.26 2.54 isp847x3,2,1 isp847-3,2,1 dimensions in mm low input current phototransistor optically coupled isolators approvals l ul recognised, file no. e91231 'x' specification approvals l vde 0884 in 3 available lead form : - - std - g form - smd approved to cecc 00802 l certified to en60950 by the following test bodies :- nemko - certificate no. p01102465 fimko - certificate no. fi18162 semko - reference no. 0202041/01-25 demko - certificate no. 311161-01 l bsi approved - cetificate no. 8001 description the isp817-3,-2,-1, isp827-3,-2,-1, isp847- 3,-2,-1 series of optically coupled isolators consist of infrared light emitting diodes and npn silicon photo transistors in space efficient dual in line plastic packages. features l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l low input current 0.5ma i f l high current transfer ratio (50% min) l high isolation voltage (5.3kv rms ,7.5kv pk ) l high bv ceo (70v min) l all electrical parameters 100% tested l custom electrical selections available applications l computer terminals l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances option sm surface mount option g 5 12 3.35 5.08 4.08 1 8 14 4 13 isp817x,isp827x,isp847x3,2,1 isp817,isp827,isp847-3,-2,-1 isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com 10.46 9.86 0.6 0.1 1.25 0.75 db92239m-aas/a6
db92239m-aas/a6 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 20ma reverse current (i r ) 10 m a v r = 4v output collector-emitter breakdown (bv ceo ) 70 v i c = 1ma ( note 2 ) emitter-collector breakdown (bv eco ) 6 v i e = 10 m a collector-emitter dark current (i ceo ) 100 na v ce = 20v coupled current transfer ratio (ctr) (note 2) isp817-3, isp827-3, isp847-3 70 % 0.5ma i f , 0.4v v ce 100 % 1.0ma i f , 0.4v v ce isp817-2, isp827-2, isp847-2 50 % 0.5ma i f , 0.4v v ce isp817-1, isp827-1, isp847-1 50 % 1.0ma i f , 0.4v v ce collector-emitter saturation voltage -3 0.4 v 0.5ma i f , 0.35ma i c -2 0.4 v 0.5ma i f , 0.25ma i c -1 0.4 v 1.0ma i f , 0.5ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output rise time tr 4 18 m s v ce = 2v , output fall time tf 3 18 m s i c = 0.2ma,r l = 100 w note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 3/3/03 electrical characteristics ( t a = 25c unless otherwise noted ) absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 125c operating temperature -30c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 70v emitter-collector voltage bv eco 6v power dissipation 150mw power dissipation total power dissipation 200mw (derate linearly 2.67mw/ c above 25c)
db92239m-aas/a6 3/3/03 50 -30 0 25 50 75 100 125 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter voltage v ce ( v ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 100 t a = 25c 0 0.8 1.2 1.6 2.0 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 forward current i f (ma) collector current vs. low collector-emitter voltage 0 0.2 0.4 0.6 0.8 1.0 collector current i c (ma) relative current transfer ratio current transfer ratio vs. forward current forward current i f (ma) current transfer ratio ctr (%) 0 40 60 80 100 0 0.5 1.0 i f = 0.5ma i f = 1ma 0.4 0.1 0.2 0.5 1 2 5 120 20 i f = 1ma i c = 0.5ma 1.5 i f = 1ma v ce = 0.4v -30 0 25 50 75 100 ambient temperature t a ( c ) relative current transfer ratio vs. ambient temperature v ce = 0.4v t a = 25 c
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